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Infineon

IRF4905PBF

  • Manufacturer:Infineon
  • Manufacturer model:IRF4905PBF
  • Encapsulation:TO-220-3
  • Data manual:

product details introduce

Manufacturer:    Infineon    

Product Category:    MOSFET    

RoHS:     Details    

Technology:    Si    

Mounting Style:    Through Hole    

Package / Case:    TO-220-3    

Transistor Polarity:    P-Channel    

Number of Channels:    1 Channel    

Vds - Drain-Source Breakdown Voltage:    55 V    

Id - Continuous Drain Current:    70 A    

Rds On - Drain-Source Resistance:    20 mOhms    

Vgs - Gate-Source Voltage:    - 20 V, + 20 V    

Vgs th - Gate-Source Threshold Voltage:    2 V    

Qg - Gate Charge:    180 nC    

Minimum Operating Temperature:    - 55 C    

Maximum Operating Temperature:    + 150 C    

Pd - Power Dissipation:    170 W    

Channel Mode:    Enhancement    

Packaging:    Tube    

Brand:    Infineon / IR    

Configuration:    Single    

Height:    15.65 mm    

Length:    10 mm    

Product Type:    MOSFET    

Factory Pack Quantity:    1000    

Subcategory:    MOSFETs    

Transistor Type:    1 P-Channel    

Width:    4.4 mm    

Part # Aliases:    IRF4905PBF SP001571330    

Unit Weight:    0.068784 oz    


Infineon introduce

总部位于德国Neubiberg的英飞凌科技股份公司,为现代社会的三大科技挑战领域——高能效、移动性和安全性提供半导体和系统解决方案。

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