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VISHAY

SI2301CDS-T1-GE3

  • Manufacturer:VISHAY
  • Manufacturer model:SI2301CDS-T1-GE3
  • Encapsulation:SOT-23-3
  • Data manual:

product details introduce

Manufacturer:    Vishay    

Product Category:    MOSFET    

RoHS:     Details    

Technology:    Si    

Mounting Style:    SMD/SMT    

Package / Case:    SOT-23-3    

Transistor Polarity:    P-Channel    

Number of Channels:    1 Channel    

Vds - Drain-Source Breakdown Voltage:    20 V    

Id - Continuous Drain Current:    3.1 A    

Rds On - Drain-Source Resistance:    112 mOhms    

Vgs - Gate-Source Voltage:    - 8 V, + 8 V    

Vgs th - Gate-Source Threshold Voltage:    1 V    

Qg - Gate Charge:    3.3 nC    

Minimum Operating Temperature:    - 55 C    

Maximum Operating Temperature:    + 150 C    

Pd - Power Dissipation:    1.6 W    

Channel Mode:    Enhancement    

Tradename:    TrenchFET    

Packaging:    Reel    

Packaging:    Cut Tape    

Packaging:    MouseReel    

Brand:    Vishay Semiconductors    

Configuration:    Single    

Fall Time:    10 ns    

Product Type:    MOSFET    

Rise Time:    35 ns    

Series:    SI2    

Factory Pack Quantity:    3000    

Subcategory:    MOSFETs    

Transistor Type:    1 P-Channel    

Typical Turn-Off Delay Time:    30 ns    

Typical Turn-On Delay Time:    11 ns    

Part # Aliases:    SI2301CDS-T1-BE3 SI2301CDS-GE3    

Unit Weight:    0.000282 oz    


VISHAY introduce

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